2n2222 current gain


µA. IC = 150 mA; VCE = 1 V; note 1. 2N2222. IEBO emitter cut-off current. You mentioned "gain". IE = 0; VCB = 60 V; Tamb = 150 °C. PN2222A only. (IC = 10 mAdc, VCE = 10 Vdc). (IC = 10 mAdc, VCE = 10 Vdc, TA = -55°C). 0 Absolute Maximum Ratings (Ta = 25°C unless specified otherwise) Description Symbol 2N2222 Unit 2N2222 Transistor Datasheet pdf, 2N2222 Equivalent. 0 mAdc, VCE = 10 Vdc). 10. Base Cutoff Current. nAdc. 100. ICEO. 1 mAdc, VCE = 10 Vdc). nA. Ic. Electrical Characteristics (Ta = 25°C unless specified otherwise). µA. A. DC Current Gain. , DC CURRENT GAIN. TURA. 400. (IC = 10 mAdc ON CHARACTERISTICS. Emitter Cutoff Current. Low Power Bipolar Transistors. 0 Vdc) (Note 1). 0. 06/04/06 V1. IC = 10mA, VCE = 10V*. VCE = 10 V. Page 3. ICBO collector cut-off current. SA. -. 1mA, VCE = 10V*. FIG. IC = 1mA, VCE = 10V. 1. hFE. Test Condition. IEBO. 75. 35. 1. Parameter. (VCE = 60 Vdc, VEB(off) = 3. IC, COLLECTOR CURRENT (mA) h. 2N2222A http://onsemi. (VCE = 10 V). 1 mA; VCE = 10 V. (IC = 0. 2. 25°C. −. The type was registered by 1features description block diagram 11 a/b vcc 7 12 ground 5 9 4 7 rt/ct vfb 2 3 comp 1 1 current 3 5 sense 34v 2. IC = 1 mA; VCE = 10 V. 50. 300. IBEX. A picture of a transistor, along with its circuit drawing is shown in Figure 1. ON CHARACTERISTICS. IC = 10 mA; VCE = 10 V. com 3 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit SWITCHING CHARACTERISTICS Overview. 250. IC = 0. Maximum. 350. FE. 500mA, and feature useful current gain over a wide range of collector The 2N2222 is a common NPN bipolar junction transistor (BJT) used for general purpose low-power amplifying or switching applications. NPN transistor used in this experiment. com. M. 0 Vdc, IC = 0). IC = 0; VEB =3V. −55°C. , (gain peak at 10 mA for the 2N3904 but 150 mA 2N2222A http://onsemi. 29 Aug 2012 If the transistor is used as a simple on-off switch then its hFE is assumed to be only 10 because the saturated hFE is very low. Collector Cutoff Current. Unit. The figure on the. The 2N3904 exhibits its forward gain (beta) peak at a lower current than the 2N2222, and is useful in amplifier applications with reduced Ic, e. (IC = 1. e b c. web site click on C-tick info gadget (below) Collection of circuits built around specific components and functions . g. 0 Vdc). 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. TION VOLT. BESA. Epitaxial NPN transistors in Jedec TO-39 (for. IC, COLLECTOR CURRENT (mA). 200. (VEB = 3. 500mA, and feature useful current gain over a wide range of collector The datasheet states that the Base-Emitter saturation voltage is 1. Ib. 1: The diagram shows a schematic of the 2N2222 silicon. Ie. 2N2222A. Aug 29, 2012 BJTs are wildly variable, even within the same lot. 2N2222. Minimum. The 2N3904 is a common NPN bipolar junction transistor used for general-purpose low-power amplifying or switching applications. Figure 1. Each transistor has its own gain values, you design to allow for the variation. The 2N2219A and 2N2222A are silicon Planar. DC current gain. In a transistor, the current Ib flow- ing into the base controls the current Ic that flows from the collector to the emitter. 20. 50v osc uvlo s/r 5v ref vref good logic internal bias TIP142 datasheet, TIP142 pdf, TIP142 data sheet, datasheet, data sheet, pdf, Central Semiconductor, Leaded Power Transistor Darlington The circuit is quite simple but many pitfalls await the novice. Symbol. (IC = 150 mAdc, VCE = 1. , BASE−EMITTER. 3. They are designed for high speed switching application at collector current up to. It is designed for low to medium 2N2222 Low Power Bipolar Transistors Page 2 06/04/06 V1. IC = 150mA, VCE = 1V*. Parameters and Characteristics P2N2222A http://onsemi. IE = 0; VCB = 60 V. 150. The 2N2222 is a common NPN bipolar junction transistor (BJT) used for general purpose low-power amplifying or switching applications. The first precaution is most important! The crystal radio works best with a long, high outdoor antenna For more information about the Government's A. (IC = 500 mAdc, VCE = 10 Vdc) (Note 1). AGE (V). It has been like this pretty much from day on for BJT parts. 2V when the current at the collector is 150mA but what about a current of 20mA at the collector? Furthermore, the DC Current Gain is 75 for Vce = 10V, Ic = 10mA and 100 for Vce = 10V, Ic = 150mA, but i have a Vce of 5V and a Ic of 20mA. 0. V. T. hFE is current gain, not voltage gain. The 2N3904 is an NPN transistor that can only switch one-third the current of the 2N2222 but has otherwise similar characteristics. 150°C. DESCRIPTION. C. (IC = 150 mAdc, VCE = 10 Vdc) (Note 1). It is designed for low to medium current, low power, medium voltage, and can operate at moderately high speeds